Main Subjects = Semiconductor theory and technology
Analytical Modeling of GaN-HEMT Considering Finite Width of Two-Dimensional Electron Gas

Articles in Press, Accepted Manuscript, Available Online from 13 May 2024

10.22060/eej.2024.23101.5588

Behnam Behnam Jafari Touchaei; Majid Shalchian


Studying the Role of Ion Migration on Perovskite Light-Emitting Diodes by Steady-State Approach

Volume 54, Issue 2 (Special Issue), December 2022, Pages 377-386

10.22060/eej.2022.21178.5462

Paria Forozi-Sowmeeh; Mohammad Zohorfazeli; Morteza Maleki; Mehran Minbashi; Elnaz Yazdani


Influence of TiO2 layer thickness as photoanode in Dye Sensitized Solar Cells

Volume 51, Issue 1, June 2019, Pages 101-110

10.22060/eej.2019.15241.5254

Maryam Shirkavand; Mohammad Bavir; Ali Fattah; Hamid Reza Alaei; Mohammad Hossein Tayarani Najaran