Exploring Performance of Nanoscale Reconfigurable Germanium Transistor for Advanced Logic Gate Design and Functionality

Articles in Press

Document Type : Research Article

Author

Department of Electronic, YI.C., Islamic Azad University, Tehran, Iran

Abstract

This paper investigates the electrical characteristics of a germanium reconfigurable transistor and comprehensively evaluates the impact of crucial design parameters on the device performance. The transistor can operate in both n-mode and p-mode simply by adjusting the bias of the electrodes. The findings demonstrate that the on-state current for n-mode operation is 1.3×10-4 (A/µm) and for p-mode operation is 8.5×10-5 (A/µm). Additionally, the on/off current ratio is 1.34×105 for n-mode and 2.35×105 for p-mode. The subthreshold swing of the device has been also computed. In n-mode operation, a subthreshold swing of 95 mV/dec is achieved, while in p-mode, a subthreshold swing of 108 mV/dec is observed at the maximum slope of the transfer characteristics. A notable feature of this device is the incorporation of a two-input XNOR logic gate as well as a two-input AND logic gate within a single transistor. The implementation of logic gates using a single reconfigurable transistor presents significant benefits in terms of energy efficiency and speed for upcoming advanced integrated circuits.

Keywords

Main Subjects

AUT Journal of Electrical Engineering

Articles in Press, Accepted Manuscript
Available Online from 25 April 2025

Files

Share

How to cite

Statistics