Document Type : Research Article
Department of Electrical Engineering, Faculty of Engineering, Azarbaijan Shahid Madani University, Tabriz, Iran
In this paper, the new structure N×M (N-Ternary inputs and M-Binary outputs) Ternary to Binary Converter based on Carbone Nanao Tube Field Effect Transistor is presented. The Carbone Nanao Tube Field Effect Transistor (CNTFET) has especial properties as controlled threshold voltage. The aforementioned advantages related to the multi-level (more specifically Ternary) circuits and systems based on CNTFET technology have encouraged researchers to put more effort on their design and realization in recent years. The Encoder (one input- five outputs), 3×1 multiplexer (one input – one selector-three outputs) and especial Adder blocks (Full Adder and Half Adder) are base blocks that are implemented by transistor level using especial properties of CNTFET transistor. In general, to implement a N-input ternary-to-binary converter, the number of inputs can be divided into two small converters, and also a ternary-to-binary converter can be designed for each input. In this paper, 2×4, 3×5, 4×7 and 5×8 Ternary to Binary converters are designed and simulated by Hospice and 32 nano meter technology. The result of simulation is shown that 5×8 Ternary to Binary converter has 1.89 µW DC-Power and 52 ps propagation delay. The proposed 5×8 TTBC converter is implemented by 365 CNTFET transistors and divided two ternary to binary converters.