The effect of a charge trap in the vicinity of the quantum-dot on the charge stability diagram of a single electron transistor

Document Type : Research Article

Authors

Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran

Abstract

In this article, we explored the effect of a single charge trap on the charge stability diagram of the quantum-dot-based single-electron transistor. We investigated anomalies in the coulomb characteristic diagram, system energy, occupation probabilities, and quantum dot conductivity arising from the electrostatic interaction between the main dot and this charge trap. The anomalies were studied for various locations of the trap, mainly when the trap is located at the source or drain sides of the device. A significant enhancement in quantum dot conductivity was observed by bringing the main quantum dot closer to the source and drain with increased coupling capacitors. The trap, capacitively linked to the quantum dot, has two charge states, either empty or occupied by a single electron. Considering various quantum states, we solved the master equation using Fermi's golden rule to obtain tunneling rates and the matrix of tunneling coefficients. Inverting the coefficient matrix allowed us to determine the probability of each quantum state. The results of this analysis have been validated by comparing simulation results with experimental data. In conclusion, our study provides a valuable tool for detecting charge presence in a trap near a quantum dot, potentially applicable for the readout of quantum gates.

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References

[1]          M. Veldhorst, H. Eenink, C.-H. Yang, and A. S. Dzurak, "Silicon CMOS architecture for a spin-based quantum computer," Nature communications, vol. 8, no. 1, p. 1766, 2017.
[2]          C. H. Yang et al., "Operation of a silicon quantum processor unit cell above one kelvin," Nature, vol. 580, no. 7803, pp. 350-354, 2020.
[3]          A. Rassekh, M. Shalchian, J.-M. Sallese, and F. Jazaeri, "Design space of quantum dot spin qubits," Physica B: Condensed Matter, vol. 666, p. 415133, 2023.
[4]          B. E. Kane, "A silicon-based nuclear spin quantum computer," nature, vol. 393, no. 6681, pp. 133-137, 1998.
[5]          D. Loss and D. P. DiVincenzo, "Quantum computation with quantum dots," Physical Review A, vol. 57, no. 1, p. 120, 1998.
[6]          H. Kiyama et al., "Single-electron charge sensing in self-assembled quantum dots," Scientific reports, vol. 8, no. 1, p. 13188, 2018.
[7]          S. Gustavsson et al., "Counting statistics of single electron transport in a quantum dot," Physical review letters, vol. 96, no. 7, p. 076605, 2006.
[8]          Y. Yin, "Emission rate of electron transport through a quantum point contact," Journal of Physics: Condensed Matter, vol. 35, no. 35, p. 355301, 2023.
[9]          P. Lafarge, H. Pothier, E. R. Williams, D. Esteve, C. Urbina, and M. H. Devoret, "Direct observation of macroscopic charge quantization," Zeitschrift für Physik B Condensed Matter, vol. 85, pp. 327-332, 1991.
[10]        L. Molenkamp, K. Flensberg, and M. Kemerink, "Scaling of the Coulomb energy due to quantum fluctuations in the charge on a quantum dot," Physical review letters, vol. 75, no. 23, p. 4282, 1995.
[11]        T. Buehler et al., "Single-shot readout with the radio-frequency single-electron transistor in the presence of charge noise," Applied Physics Letters, vol. 86, no. 14, 2005.
[12]        T. Fujisawa, T. Hayashi, Y. Hirayama, H. Cheong, and Y. Jeong, "Electron counting of single-electron tunneling current," Applied physics letters, vol. 84, no. 13, pp. 2343-2345, 2004.
[13]        W. Lu, Z. Ji, L. Pfeiffer, K. West, and A. Rimberg, "Real-time detection of electron tunnelling in a quantum dot," Nature, vol. 423, no. 6938, pp. 422-425, 2003.
[14]        R. Schoelkopf, P. Wahlgren, A. Kozhevnikov, P. Delsing, and D. Prober, "The radio-frequency single-electron transistor (RF-SET): A fast and ultrasensitive electrometer," science, vol. 280, no. 5367, pp. 1238-1242, 1998.
[15]        A. S. de Almeida et al., "Ambipolar charge sensing of few-charge quantum dots," Physical Review B, vol. 101, no. 20, p. 201301, 2020.
[16]        D. Bozyigit, S. Volk, O. Yarema, and V. Wood, "Quantification of deep traps in nanocrystal solids, their electronic properties, and their influence on device behavior," Nano letters, vol. 13, no. 11, pp. 5284-5288, 2013.
[17]        A. A. Cordones and S. R. Leone, "Mechanisms for charge trapping in single semiconductor nanocrystals probed by fluorescence blinking," Chemical Society Reviews, vol. 42, no. 8, pp. 3209-3221, 2013.
[18]        A. H. Ip et al., "Hybrid passivated colloidal quantum dot solids," Nature nanotechnology, vol. 7, no. 9, pp. 577-582, 2012.
[19]        S. C. Boehme et al., "Density of trap states and Auger-mediated electron trapping in CdTe quantum-dot solids," Nano Letters, vol. 15, no. 5, pp. 3056-3066, 2015.
[20]        M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet, and S. Deleonibus, "Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy," The European Physical Journal B-Condensed Matter and Complex Systems, vol. 54, pp. 299-307, 2006.
[21]        S. Datta, Quantum transport: atom to transistor. Cambridge university press, 2005.
[22]        A. Rassekh, M. Shalchian, J.-M. Sallese, and F. Jazaeri, "Tunneling Current Through a Double Quantum Dots System," Ieee Access, vol. 10, pp. 75245-75256, 2022.
[23]        R. A. Bush, E. D. Ochoa, and J. K. Perron, "Transport through quantum dots: An introduction via master equation simulations," American Journal of Physics, vol. 89, no. 3, pp. 300-306, 2021.
[24]        M. Hofheinz, "Coulomb blockade in silicon nanowire MOSFETs," Université Joseph-Fourier-Grenoble I, 2006.
AUT Journal of Electrical Engineering
Volume 56, Issue 3
2024
Pages 453-464

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