A Class E Power Amplifier with Low Voltage Stress

Document Type : Research Article

Authors

1 Professor, Department of Electrical Engineering, Faculty of Engineering, Razi University, Tagh-E-Bostan, Kermanshah-67149, Iran

2 Faculty Member, Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran

Abstract

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. The maximum switch voltage of the conventional class E PA is 3.56Vdc. However, higher switch voltage of about 4.5VDC may be occurred, by considering nonlinear drain-to-source capacitance in class E PA. The obtained peak switch voltage of the designed class E PA is approximately 75% of the conventional one with the same conditions, which shows a significant reduction in peak switch voltage. MOSFET parasitic nonlinear gate-to-drain and nonlinear drain-to-source capacitances of the MOSFET body junction diode also affect the switch voltage in class E PA, which are considered in this paper. The actual MOSFETs have these parasitic capacitances; therefore, it is necessary to consider these elements in the design procedure. Reduced switch voltage in class E PA relaxes the breakdown voltage constraints of the active device. In the switch voltage of the designed circuit, the zero voltage and zero derivative switching (ZVS and ZVDS) conditions are satisfied. Simulation of the presented circuit is performed using PSpice and LTspice softwares. For verification of the designed circuit, the presented PA is fabricated and measured.

Keywords

References

[1] H. Golestaneh, A. Abdipour, and A.Mohammadi, “Nonlinear modeling and analysisof a Doherty power amplifier driven by nonconstantenvelope signals”, Analog IntegratedCircuits and Signal Processing, vol. 72, No. 1,pp. 141-153. 2012.
[2] M. Majidi, A. Mohammadi, and A. Abdipour,“Analysis of the power amplifier nonlinearity
on the power allocation in cognitive radionetworks”, IEEE Transactions onCommunications, vol. 62, No. 2, pp. 467-477,2014.
[3] M. Hayati, F. Shamma, S. Roshani, and A.Abdipour, “Linearization design method in
class-F power amplifier using artificial neuralnetwork.” Journal of ComputationalElectronics, vol. 13, No. 4, pp. 943-949, 2014.
[4] M. Hayati and S. Roshani, “A novelminiaturized power amplifier with nth harmonicsuppression”, AEU-International Journal ofElectronics and Communications, vol. 68, No.10, pp. 1016-1021, 2014.
[5] M. Vasic, O. Garcia, J. A. Oliver, P. Alou, D.Diaz, R. Prieto, and J. Cobos, “Envelopeamplifier based on switching capacitors forhigh-efficiency RF amplifiers”, PowerElectronics, IEEE Transactions on, vol. 27, No.
3, pp. 1359-1368, 2012.
[6] A. Mediano and N. O. Sokal, “A Class-RFPower Amplifier with a Flat-Top Transistor-Voltage Waveform”, IEEE Transactions onPower Electronics, vol. 28, No. 11, pp. 5215-5221, 2013.
[7] N. O. Sokal and A.D. Sokal, “Class EA newclass of high-efficiency tuned single-endedswitching power amplifiers”, IEEE Journal ofSolid-State Circuits, vol. 10, No. 3, pp. 168-176, 1975.
[8] M. K. Kazimierczuk, RF Power Amplifier,John Wiley & Sons, 2014.
[9] M. J. Chudobiak, “The use of parasiticnonlinear capacitors in class E amplifiers”,IEEE Transactions on Circuits and Systems I:Fundamental Theory and Applications, vol. 41,No. 12, pp. 941-944, 1994.
[10] T. Suetsugu and M. K. Kazimierczuk,“Comparison of class-E amplifier with
nonlinear and linear shunt capacitance”, IEEE Transactions on Circuits and Systems I:Fundamental Theory and Applications, vol. 50,No. 8, pp. 1089-1097, 2003.
[11] M. Hayati, A. Lotfi, M. K. Kazimierczuk, andH. Sekiya, “Generalized Design Considerations
and Analysis of Class-E Amplifier forSinusoidal and Square Input VoltageWaveforms”, IEEE Transactions on IndustrialElectronics, vol. 62, No. 1, pp. 211-220, 2015.
[12] P. Alinikula, K. Choi, and S. Long, “Design of class E power amplifier with nonlinear parasitic output capacitance”, IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol. 46, No. 2, pp. 114-119, 1999.
[13]
T. Suetsugu and M. K. Kazimierczuk, “Analysis and design of class E amplifier with shunt capacitance composed of nonlinear and linear capacitances”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 51, No. 7, pp. 1261-1268, 2004.
[14]
T. Suetsugu and M. K. Kazimierczuk, “Maximum operating frequency of class-E amplifier at any duty ratio”, IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 8, No. 55, pp. 768-770, 2008.
[15]
M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, “Analysis and design of class-E power amplifier with MOSFET parasitic linear and nonlinear capacitances at any duty ratio.” IEEE Transactions on Power Electronics, vol. 28, No. 11, pp. 5222-5232. 2013.
[16]
X. Wei, H. Sekiya, S. Kuroiwa, T. Suetsugu, and M.K. Kazimierczuk, “Design of class-E amplifier with MOSFET linear gate-to-drain and nonlinear drain-to-source capacitances”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 58, No. 10, pp. 2556-2565. 2011.
[17]
T. Suetsugu and M. K. Kazimierczuk, “Voltage-clamped class E amplifier with a Zener diode across the switch”, in IEEE International Symposium on Circuits and Systems, ISCAS, pp. IV-361, 2002.
[18]
T. Suetsugu and M. K. Kazimierczuk, “Lossless voltage-clamping of a class E amplifier with a transformer and a diode.” in International Symposium on Circuits and Systems, ISCAS, pp. III-276, 2003.
[19]
T. Mury, and V. F. Fusco, “Sensitivity characteristics of inverse Class-E power amplifier”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 54, No. 4, pp. 768-778, 2007.
[20]
P. Chen, and S. He, “Investigation of Inverse Class-E Power Amplifier at Sub-Nominal Condition for Any Duty Ratio.” IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 62, No. 4, pp. 1015-1024. 2015.
[21]
Z. Kaczmarczyk, “High efficiency class E, E/F2 and E/F inverters”, IEEE Transactions on Industrial Electronics, vol. 53, pp. 1584–1593, 2006.
[22]
A. Grebennikov, “High-efficiency Class E/F lumped and transmission-line power amplifiers”, IEEE Transactions on Microwave Theory and Techniques, vol. 59, No. 6, pp.
1579-1588. 2011.
[23]
T. Mury, and V. F. Fusco, “Inverse Class-E amplifier with transmission-line harmonic suppression”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 54, No. 7, pp. 1555-1561, 2007.
[24]
F. You, S. He, X. Tang, and X. Deng, “The effects of limited drain current and on resistance on the performance of an LDMOS inverse class-E power amplifier”, IEEE Transactions on Microwave Theory and Techniques, vol. 57, No. 2, pp. 336-343, 2009.
[25]
T. Suetsugu and M. K. Kazimierczuk, “Design procedure of class-E amplifier for off-nominal operation at 50% duty ratio”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 53, No. 7, pp. 1468-1476, 2006.
[26]
M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, “Performance study of class-E power amplifier with a shunt inductor at subnominal condition”, IEEE Transactions on Power Electronics, vol. 28, No. 8, pp. 3834-3844, 2013.
[27]
A. Mediano and N. O. Sokal, “A Class-RF Power Amplifier with a Flat-Top Transistor-Voltage Waveform”, IEEE Transactions on Power Electronics, vol. 28, No. 11, pp. 5215-5221, 2013.
[28]
F. Y. Chen, J. F. Chen, and R. L. Lin, “Low-harmonic push–pull Class-E power amplifier with a pair of LC resonant networks”, IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 54, No. 3, pp. 579-589, 2007.
[29]
H. Kobayashi, J. M. Hinrichs, and P. M. Asbeck, “Current-mode class-D power amplifiers for high-efficiency RF applications”, IEEE Transactions on Microwave Theory and techniques, vol. 49. No. 12, pp. 2480-2485. 2001.
[30]
T. P. Hung, A. G. Metzger, P. J. Zampardi, M. Iwamoto, and P. M. Asbeck, “Design of high-efficiency current-mode class-D amplifiers for wireless handsets”, IEEE Transactions on Microwave Theory and Techniques, vol. 53, No. 1, pp. 144-151. 2005.

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