Amirkabir University of Technology AUT Journal of Electrical Engineering 2588-2910 57 3 2025 10 01 Exploring Performance of Nanoscale Reconfigurable Germanium Transistor for Advanced Logic Gate Design and Functionality 435 444 5731 10.22060/eej.2025.23481.5615 EN Zahra Ahangari Department of Electronics, YI.C., Islamic Azad University, Tehran, Iran Journal Article 2024 08 28 This paper investigates the electrical characteristics of a germanium reconfigurable transistor and comprehensively evaluates the impact of crucial design parameters on the device performance. The transistor can operate in both n-mode and p-mode simply by adjusting the bias of the electrodes. The findings demonstrate that the on-state current for n-mode operation is 1.3×10^-4 (A/µm) and for p-mode operation is 8.5×10^-5 (A/µm). Additionally, the on/off current ratio is 1.34×10⁵ for n-mode and 2.35×10⁵ for p-mode. The subthreshold swing of the device has also been computed. In n-mode operation, a subthreshold swing of 95 mV/dec is achieved, while in p-mode, a subthreshold swing of 108 mV/dec is observed at the maximum slope of the transfer characteristics. A notable feature of this device is the incorporation of a two-input XNOR logic gate as well as a two-input AND logic gate within a single transistor. The implementation of logic gates using a single reconfigurable transistor presents significant benefits in terms of energy efficiency and speed for upcoming advanced integrated circuits. https://eej.aut.ac.ir/article_5731_fba75ca85c5aef3bc828833f44cbd376.pdf