Amirkabir University of Technology AUT Journal of Electrical Engineering 2588-2910 56 3 2024 07 01 Low-Power MOSFET-Only Subthreshold Voltage Reference with High PSRR 439 452 5446 10.22060/eej.2024.23046.5583 EN Mohammad Rashtian Department of Aviation Electronics, Civil Aviation Technology College, Tehran, Iran Mahdi Shahpasandi Department of Aviation Electronics, Civil Aviation Technology College, Tehran, Iran Journal Article 2024 03 09 This work presents a sub-nanowatt voltage reference (VR) achieving a high-power supply ripple rejection (PSRR). It utilizes a self-current biasing circuit to reduce the voltage dependency of the output voltage (V_REF) to the power supply variations. For low-power operation, all transistors operate in the subthreshold region. The design's performance is verified through post-layout and Monte Carlo simulations in a standard 180 nm CMOS process. Results show that the proposed bandgap achieves an output voltage of 0.150 V with a PSRR of -81.5 dB at V­­_dd = 1V. Notably, it eliminates the need for an additional startup circuit and consumes only 0.72 nW at T = 27°C with V_dd = 0.5V. The proposed voltage reference exhibits a temperature coefficient (TC) of approximately 18 ppm/°C over a temperature range of -20°C to 130°C while without using a trimming circuit a reasonable (σ _VREF /μ_VREF) = 2.3% is obtained. This design's average line sensitivity (LS) is 0.072%/V (V_dd = 0.5V to 1.8V). However, the PSRR and LS values are temperature-dependent. At the high temperature of 130°C (worst-case), the PSRR and LS degrade to approximately -80.45 dB and 0.084 %/V, respectively.  The output noise at the frequency of 1 KHz is obtained as 167.34 nV/ √ Hz. The proposed VR occupies a small active area of 513.5 μm². https://eej.aut.ac.ir/article_5446_c79ec4f12a3564898baef75d49d910ae.pdf